PE64904 UltraCMOS® Digitally Tunable Capacitor

    SG$ 3.06 SG$ 3.06 3.0629 SGD

    US$ 2.27

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    Digitally Tunable Capacitor (100-3000 MHz) SPI Interface

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    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.



    The PE64904 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi's UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. The PE64904 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements. This highly versatile product can be used in series or shunt configurations to support a wide variety of tuning circuit topologies. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing are integrated on-chip and no external bypassing or filtering components are required.

    pSemi's DuNE™ technology enables excellent linearity and exceptional harmonic performance. DuNE devices deliver performance superior to GaAs devices with the economy and integration of conventional CMOS.


        3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
        DuNE™-enhanced UltraCMOS® device
        5-bit 32-state digitally tunable capacitor
        Series configuration C = 0.60 - 4.60 pF (7.7:1 tuning ratio) in discrete 129 fF steps
        Shunt configuration C = 1.14 - 5.10 pF (4.6:1 tuning ratio) in discrete 129 fF steps
        High RF power handling (up to 38 dBm, 30 Vpk RF) and high linearity
        Wide power supply range (2.3 to 3.6V) and low current consumption (typ. 140 μA at 2.6V)
        Excellent 1.5 kV HBM ESD tolerance on all pins
        Packaging: 10-lead 2 × 2 × 0.45 mm QFN package
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