PE64906 UltraCMOS® Digitally Tunable Capacitor

    SG$ 1.02 SG$ 1.02 1.0168000000000001 SGD

    US$ 0.75

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    Digitally Tunable Capacitor (100-3000 MHz) 0.9-4.6pF, SPI Interface

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    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.



    PE64906 is a DuNE™ technology-enhanced digitally tunable capacitor (DTC) based on pSemi’s UltraCMOS® technology. This highly versatile product supports a wide variety of tuning circuit topologies with an emphasis on impedance matching and aperture tuning applications. PE64906 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements enabled by pSemi’s HaRP™ technology. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing are integrated on-chip and no external bypassing or filtering components are required.

    DuNE devices are easy to use while delivering superior RF performance in the form of tuning accuracy, monotonicity, tuning ratio, power handling, size, and quality factor. With built-in bias voltage generation and ESD protection, DTC products provide a monolithically integrated tuning solution for demanding RF applications.


        3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
        DuNE™ technology-enhanced
        5-bit 32-state digitally tunable capacitor
        Shunt configuration C = 0.9 pF to 4.6 pF (5.1:1 tuning ratio) in discrete 119 fF steps
        High RF power handling (30 Vpk RF) and linearity
        Wide power supply range (2.3V to 4.8V) and low current consumption (typ. 140 μA at 2.75V)
        High ESD tolerance of 2 kV HBM on all pins
        Packaging: 10-lead 2 × 2 × 0.55 mm QFN
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